Authors: Llorens, JM; Lopes-Oliveira, V; Lopez-Richard, V; de Oliveira, ERC; Wewior, L; Ulloa, JM; Teodoro, MD; Marques, GE; Garcia-Cristobal, A; Hai, GQ; Alen, B
Article.
Phys. Rev. Appl.. vol: 11. page: 2331-7019.
Date: APR 4. 2019.
Doi: 10.1103/PhysRevApplied.11.044011.
Abstract:
We investigate how the voltage control of the exciton lateral dipole moment induces a transition from singly to doubly connected topology in type-II InAs/GaAsxSb1-x quantum dots. The latter causes visible Aharonov-Bohm oscillations and a change of the exciton g factor, which are modulated by the applied bias. The results are explained in the frame of realistic (k) over right arrow . (p) over right arrow and effective Hamiltonian models and could open a venue for new spin quantum memories beyond the InAs/GaAs realm..
