Authors: Laurindo, V; Mazur, YI; de Oliveira, ERC; Alen, B; Ware, ME; Marega, E; Zhuchenko, ZY; Tarasov, GG; Marques, GE; Teodoro, MD; Salamo, GJ
Article.
Phys. Rev. B. vol: 100. page: 2469-9950.
Date: JUL 19. 2019.
Doi: 10.1103/PhysRevB.100.035309.
Abstract:
A magnetophotoluminescence study of the carrier transfer with hybrid InAs/GaAs-quantum-dot-InGaA-squantum-well structures is carried out where we observe an unusual dependence of the photoluminescence (PL) on the GaAs barrier thickness at strong magnetic field and excitation density. For the case of a thin barrier the quantum-well (QW) PL intensity is observed to increase at the expense of a decrease in the quantum-dot (QD) PL intensity. This is attributed to changes in the interplane carrier dynamics in the QW and the wetting layer (WL) resulting from increasing the magnetic field along with changes in the coupling between QD excited states and exciton states in the QW and the WL..
