Authors: Llorens, JM; Alen, B
Article.
Phys. Status Solidi-Rapid Res. Lett.. vol: 13. page: 1862-6254.
Date: JAN. 2019.
Doi: 10.1002/pssr.201800314.
Abstract:
InAs self-assembled quantum dots capped with GaAsSb exhibit type-II band alignment and singly or doubly connected hole wave-function topology depending on the thickness of the capping layer or the Sb concentration. A configuration interaction analysis of the excitons complexes X-0, X-1, and X+1 for different overlayer thicknesses is presented. A characteristic double line structure of the X+1 recombination is predicted for the doubly connected topology. A hallmark is established to identify the optical Aharonov-Bohm transition in addition to the well-known intensity fade-out of the X-0..
